JPH0418461B2 - - Google Patents
Info
- Publication number
- JPH0418461B2 JPH0418461B2 JP60077682A JP7768285A JPH0418461B2 JP H0418461 B2 JPH0418461 B2 JP H0418461B2 JP 60077682 A JP60077682 A JP 60077682A JP 7768285 A JP7768285 A JP 7768285A JP H0418461 B2 JPH0418461 B2 JP H0418461B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- oxide film
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 229920005591 polysilicon Polymers 0.000 description 30
- 238000009792 diffusion process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077682A JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
| GB08604500A GB2175136B (en) | 1985-04-10 | 1986-02-24 | Semiconductor manufacturing method |
| US06/833,327 US4728618A (en) | 1985-04-10 | 1986-02-25 | Method of making a self-aligned bipolar using differential oxidation and diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077682A JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61234564A JPS61234564A (ja) | 1986-10-18 |
| JPH0418461B2 true JPH0418461B2 (en]) | 1992-03-27 |
Family
ID=13640660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60077682A Granted JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61234564A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622657A (ja) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| CN110120344B (zh) * | 2019-04-09 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | 一种在锗硅hbt中用氮化硅侧墙实现自对准结构的方法 |
-
1985
- 1985-04-10 JP JP60077682A patent/JPS61234564A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61234564A (ja) | 1986-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4839305A (en) | Method of making single polysilicon self-aligned transistor | |
| US4412378A (en) | Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation | |
| JPH0418463B2 (en]) | ||
| JPS62237754A (ja) | 半導体集積回路装置及びその製造方法 | |
| JPH0611053B2 (ja) | 半導体装置の製造方法 | |
| US4691436A (en) | Method for fabricating a bipolar semiconductor device by undercutting and local oxidation | |
| JPH0241170B2 (en]) | ||
| US4728618A (en) | Method of making a self-aligned bipolar using differential oxidation and diffusion | |
| JPH0135505B2 (en]) | ||
| JPH0418461B2 (en]) | ||
| JPH0254662B2 (en]) | ||
| JPH0136710B2 (en]) | ||
| JPH0418462B2 (en]) | ||
| JPH0466380B2 (en]) | ||
| JPH0437581B2 (en]) | ||
| JPH0318738B2 (en]) | ||
| JPH0420263B2 (en]) | ||
| JPS6286753A (ja) | 半導体装置の製造方法 | |
| JPS61108169A (ja) | 半導体装置 | |
| JPH0136709B2 (en]) | ||
| JPS6246072B2 (en]) | ||
| JPH0130310B2 (en]) | ||
| JPH0157506B2 (en]) | ||
| JPS612363A (ja) | 半導体装置の製造方法 | |
| JPS645472B2 (en]) |